23K256T-E/ST【PDF 2/28 页】IC SRAM 256KBIT 20MHZ 8TSSOP

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23A256/23K256

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (?)

V CC .............................................................................................................................................................................4.5V

All inputs and outputs w.r.t. V SS ......................................................................................................... -0.3V to V CC +0.3V

Storage temperature .................................................................................................................................-65°C to 150°C

Ambient temperature under bias ...............................................................................................................-40°C to 125°C

ESD protection on all pins ...........................................................................................................................................2kV

? NOTICE : Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an

extended period of time may affect device reliability.

TABLE 1-1:

DC CHARACTERISTICS

DC CHARACTERISTICS

Industrial (I): T A = -40°C to +85°C

Automotive (E): T A = -40°C to +125°C

Param.

No.

D001

D001

D002

Sym.

V CC

V CC

V IH

Characteristic

Supply voltage

Supply voltage

High-level input

Min.

1.5

2.7

.7 V CC

Typ (1)

—

—

—

Max.

1.95

3.6

V CC +0.3

Units

V

V

V

Test Conditions

23A256 (I-Temp)

23K256 (I,E-Temp)

voltage

D003

V IL

Low-level input

-0.3

—

0.2xV CC

V

voltage

0.15xV CC

V

23K256 (E-Temp)

D004

V OL

Low-level output

—

—

0.2

V

I OL = 1 mA

voltage

D005

V OH

High-level output

V CC -0.5

—

—

V

I OH = -400 ? A

voltage

D006

I LI

Input leakage

—

—

±0.5

? A

CS = V CC , V IN = V SS OR V CC

current

D007

I LO

Output leakage

—

—

±0.5

? A

CS = V CC , V OUT = V SS OR V CC

current

D008

D009

I CC Read

I CCS

Operating current

Standby current

—

—

—

—

—

—

—

—

0.2

1

3

6

10

1

4

mA

mA

mA

? A

? A

F CLK = 1 MHz; SO = O

F CLK = 10 MHz; SO = O

F CLK = 20 MHz; SO = O

CS = V CC = 1.8V, Inputs tied to V CC

or V SS

CS = V CC = 3.6V, Inputs tied to V CC

or V SS

—

5

10

? A

CS = V CC = 3.6V, Inputs tied to V CC

or V SS @ 125°C

D010

C INT

Input capacitance

7

pF

V CC = 0V, f = 1 MHz, Ta = 25°C

( Note 1 )

D011

V DR

RAM data retention

voltage (2)

—

1.2

—

V

Note 1:

2:

This parameter is periodically sampled and not 100% tested. Typical measurements taken at room

temperature (25°C).

This is the limit to which V DD can be lowered without losing RAM data. This parameter is periodically

sampled and not 100% tested.

DS22100F-page 2

? 2008-2011 Microchip Technology Inc.

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